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AM83135-005
.REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
G OLD METALL IZATION TTER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY CERAMIC HERMETIC PACKAGE OUT = 5.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NL FL (S042) hermetically sealed O RDER CODE AM83135-005 BRANDING 83135-5
The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-005 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Un it
PDISS IC VCC TJ TSTG
P ower Dissipation* Device Current*
(TC 100C)
40 1.8 34 250 - 65 to +200
W A V C C
Collector-Supply Voltage* J un ction Temperature (Pulsed RF Operation) S torage Temperature
THERMAL DATA RTH(j-c) J un ction-Cas e Thermal R e sistance* 3.75 C/W
*Applies only to rated RF a mplifier oper ation
August 23, 1996
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AM83135-005
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symb ol Test Con ditio ns Value Min. T yp. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 4 mA IE = 2 mA IC = 4 mA VCE = 30 V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 IC = 500 mA
50 3.5 50 -- 10
-- -- -- -- --
-- -- -- 2.0 --
V V V mA --
DYNAMIC
Symb ol T est Co nditi ons Value Min. Typ . Max. Un it
POUT hc PG
Note:
f = 3.1 - 3.5 GHz f = 3.1 - 3.5 GHz f = 3.1 - 3.5 GHz = =
100 S 10%
PIN = 1.5 W POUT = 5.0 W POUT = 5.0 W
VCC = 30 V VCC = 30 V VCC = 30 V
5.0 27 5.2
6.0 -- 6.4
-- -- --
W % dB
P uls e Wi dth D uty Cycl e
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AM83135-005
IMPEDANCE DATA TYPICAL INPUT IMPEDANCE
ZIN
L TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
ZIN H ZCL L
FREQ. L = 2.7 GHz u = 2.9 GHz M = 3.1 GHz u = 3.3 GHz H = 3.5 GHz
ZIN () 9.0 j 22.0 9.0 j 23.0 12.5 + j 25.0 20.0 + j 25.0 22.0 + j 22.5
ZCL () 48.0 + j 11.5 43.0 + j 9.0 30.0 + j 3.0 21.5 + 0.0 16.0 - j 3.0
H
PIN = 1.5 W VCC = 30 V Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in inches. Substrate Material: .025 tick Al203 (Er = 9.6) C1 C2 C3 : 100 pF Chip Capacitor (Note: Mounted on its thin side) : 1500 pF RF Feedthru : 100 mF Electrolytic L1 L2 : No. 32 Wire, 2 Turns 1/16" I.D. : Printed Choke
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AM83135-005
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A UDCS Doc. No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
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